Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors

Released on by Evelyn Tina Breyer
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  • Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors Book Detail

  • Author : Evelyn Tina Breyer
  • Release Date : 2022-02-08
  • Publisher : BoD – Books on Demand
  • Genre : Technology & Engineering
  • Pages : 216
  • ISBN 13 : 3755708523
  • File Size : 77,77 MB
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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by Evelyn Tina Breyer PDF Summary

Book Description: Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

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Advanced Field-Effect Transistors

Advanced Field-Effect Transistors

File Size : 9,9 MB
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Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devic