Non Quasi-static Effects Investigation for Compact Bipolar Transistor Modeling

Released on by Arkaprava Bhattacharyya
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  • Non Quasi-static Effects Investigation for Compact Bipolar Transistor Modeling Book Detail

  • Author : Arkaprava Bhattacharyya
  • Release Date : 2011
  • Publisher :
  • Genre :
  • Pages : 0
  • ISBN 13 :
  • File Size : 68,68 MB
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Non Quasi-static Effects Investigation for Compact Bipolar Transistor Modeling by Arkaprava Bhattacharyya PDF Summary

Book Description: Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In the current work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and the results are compared with the published work. In popular bipolar model HICUM lateral and vertical NQS are examined separately and uses the same model for both transient and AC operation which requires an additional minimum phase type sub circuit. Compact modeling with HICUM model is performed in both measurement and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.

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High-Frequency Bipolar Transistors

High-Frequency Bipolar Transistors

File Size : 8,8 MB
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This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particula