Rare-Earth Doped Semiconductors II: Volume 422

Released on by S. Coffa
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  • Rare-Earth Doped Semiconductors II: Volume 422 Book Detail

  • Author : S. Coffa
  • Release Date : 1996
  • Publisher :
  • Genre : Science
  • Pages : 392
  • ISBN 13 :
  • File Size : 68,68 MB
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Rare-Earth Doped Semiconductors II: Volume 422 by S. Coffa PDF Summary

Book Description: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

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GaN and Related Materials II

GaN and Related Materials II

File Size : 30,30 MB
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The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory