Research on the Radiation Effects and Compact Model of SiGe HBT

Released on by Yabin Sun
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  • Research on the Radiation Effects and Compact Model of SiGe HBT Book Detail

  • Author : Yabin Sun
  • Release Date : 2017-10-24
  • Publisher : Springer
  • Genre : Technology & Engineering
  • Pages : 187
  • ISBN 13 : 9811046123
  • File Size : 34,34 MB
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Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun PDF Summary

Book Description: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

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