Silicon Carbide Semiconductor Device Fabrication and Characterization

Released on by National Aeronautics and Space Administration (NASA)
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  • Silicon Carbide Semiconductor Device Fabrication and Characterization Book Detail

  • Author : National Aeronautics and Space Administration (NASA)
  • Release Date : 2018-07-11
  • Publisher : Createspace Independent Publishing Platform
  • Genre :
  • Pages : 34
  • ISBN 13 : 9781722766245
  • File Size : 38,38 MB
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Silicon Carbide Semiconductor Device Fabrication and Characterization by National Aeronautics and Space Administration (NASA) PDF Summary

Book Description: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...

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Fundamentals of Silicon Carbide Technology

Fundamentals of Silicon Carbide Technology

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a num