Strained-Si Heterostructure Field Effect Devices

Released on by C.K Maiti
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  • Strained-Si Heterostructure Field Effect Devices Book Detail

  • Author : C.K Maiti
  • Release Date : 2007-01-11
  • Publisher : CRC Press
  • Genre : Science
  • Pages : 438
  • ISBN 13 : 1420012347
  • File Size : 47,47 MB
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Strained-Si Heterostructure Field Effect Devices by C.K Maiti PDF Summary

Book Description: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

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Strained Silicon Heterostructures

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This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems

Silicon Heterostructure Devices

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SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. H

Strain-Engineered MOSFETs

Strain-Engineered MOSFETs

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors