Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

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  • Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe Book Detail

  • Author : Fabian M. Bufler
  • Release Date : 1998
  • Publisher : Herbert Utz Verlag
  • Genre : Electron transport
  • Pages : 196
  • ISBN 13 : 9783896752703
  • File Size : 7,7 MB

Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by Fabian M. Bufler PDF Summary

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