Vertical GaN and SiC Power Devices

preview-18
  • Vertical GaN and SiC Power Devices Book Detail

  • Author : Kazuhiro Mochizuki
  • Release Date : 2018-04-30
  • Publisher : Artech House
  • Genre : Technology & Engineering
  • Pages : 284
  • ISBN 13 : 1630814296
  • File Size : 3,3 MB

Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki PDF Summary

Book Description: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Disclaimer: www.yourbookbest.com does not own Vertical GaN and SiC Power Devices books pdf, neither created or scanned. We just provide the link that is already available on the internet, public domain and in Google Drive. If any way it violates the law or has any issues, then kindly mail us via contact us page to request the removal of the link.

Vertical GaN and SiC Power Devices

Vertical GaN and SiC Power Devices

File Size : 52,52 MB
Total View : 4601 Views
DOWNLOAD

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial dev

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices

File Size : 31,31 MB
Total View : 684 Views
DOWNLOAD

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior

Gallium Nitride Power Devices

Gallium Nitride Power Devices

File Size : 68,68 MB
Total View : 4612 Views
DOWNLOAD

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, band

Power GaN Devices

Power GaN Devices

File Size : 30,30 MB
Total View : 8429 Views
DOWNLOAD

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most a