Iii-nitride Semiconductor Materials

Released on by Zhe Chuan Feng
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  • Iii-nitride Semiconductor Materials Book Detail

  • Author : Zhe Chuan Feng
  • Release Date : 2006-03-20
  • Publisher : World Scientific
  • Genre : Technology & Engineering
  • Pages : 442
  • ISBN 13 : 1908979941
  • File Size : 22,22 MB
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Iii-nitride Semiconductor Materials by Zhe Chuan Feng PDF Summary

Book Description: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

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Iii-nitride Semiconductor Materials

Iii-nitride Semiconductor Materials

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III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic appl

III-nitride

III-nitride

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III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in

III-Nitride Semiconductors

III-Nitride Semiconductors

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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectron

Optoelectronic Devices

Optoelectronic Devices

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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this