Strain-Induced Effects in Advanced MOSFETs

Released on by Viktor Sverdlov
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  • Strain-Induced Effects in Advanced MOSFETs Book Detail

  • Author : Viktor Sverdlov
  • Release Date : 2011-01-06
  • Publisher : Springer Science & Business Media
  • Genre : Technology & Engineering
  • Pages : 260
  • ISBN 13 : 3709103827
  • File Size : 27,27 MB
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Strain-Induced Effects in Advanced MOSFETs by Viktor Sverdlov PDF Summary

Book Description: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

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Strain-Induced Effects in Advanced MOSFETs

Strain-Induced Effects in Advanced MOSFETs

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device desi

Strain-Engineered MOSFETs

Strain-Engineered MOSFETs

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors